Properties of a p-n Junction Formed in a Porous Silicon Film Grown by Metal-Assisted Chemical Etching

被引：1

作者：

Melnik, N. N. ^{[1
]}

Tregulov, V. V. ^{[2
]}

Skoptsova, G. N. ^{[2
]}

Ivanov, A. I. ^{[2
]}

Kostsov, D. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

[2] Yesenin Ryazan State Univ, Ryazan 390000, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2022年 / 49卷 / 09期

关键词：

porous silicon; metal-assisted chemical etching; p-n junction; diffusion; Raman scattering; photovoltaic characteristics; current-voltage characteristics; charge carrier transport;

D O I：

10.3103/S1068335622090044

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of the study of the semiconductor structure with a p-n junction formed by thermal diffusion of phosphorus into a p-type porous silicon film are presented. The porous film was grown by metal-assisted chemical etching. It is shown that diffusion is accompanied by a decrease in silicon crystallite sizes in the porous layer. In the base region of the p-n junction, a quantum-size effect appears, leading to band gap widening. The observed charge carrier transfer mechanisms are characteristic of p-n junctions containing traps.

引用

页码：271 / 275

页数：5

共 50 条

[1] Properties of a p–n Junction Formed in a Porous Silicon Film Grown by Metal-Assisted Chemical Etching
N. N. Melnik
V. V. Tregulov
G. N. Skoptsova
A. I. Ivanov
D. S. Kostsov
Bulletin of the Lebedev Physics Institute, 2022, 49 : 271 - 275
[2] Properties of Porous Silicon Films Formed by Metal-Assisted Chemical Etching Using Various Oxidants
Melnik, N. N.
Tregulov, V. V.
Skoptsova, G. N.
Milovanova, O. A.
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2021, 48 (12) : 386 - 389
[3] Properties of Porous Silicon Films Formed by Metal-Assisted Chemical Etching Using Various Oxidants
N. N. Melnik
V. V. Tregulov
G. N. Skoptsova
O. A. Milovanova
Bulletin of the Lebedev Physics Institute, 2021, 48 : 386 - 389
[4] Porous Silicon Formation by Metal-Assisted Chemical Etching
Lipinski, M.
Cichoszewski, J.
Socha, R. P.
Piotrowski, T.
ACTA PHYSICA POLONICA A, 2009, 116 : S117 - S119
[5] Fabrication of Silicon Thin Film by Metal-Assisted Chemical Etching
Yang, Song-Ting
Liu, Chien-Ting
Thiyagu, Subramani
Hsueh, Chen-Chih
Lin, Ching-Fuh
2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2014, : 799 - 800
[6] Growth, Structure and Optical Properties of Silicon Nanowires Formed by Metal-Assisted Chemical Etching
Gonchar, K. A.
Osminkina, L. A.
Galkin, R. A.
Gongalsky, M. B.
Marshov, V. S.
Timoshenko, V. Yu
Kulmas, M. N.
Solovyev, V. V.
Kudryavtsev, A. A.
Sivakov, V. A.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2012, 7 (06) : 602 - 606
[7] Direct Imprinting of Porous Silicon via Metal-Assisted Chemical Etching
Azeredo, Bruno P.
Lin, Yu-Wei
Avagyan, Arik
Sivaguru, Mayandi
Hsu, Keng
Ferreira, Placid
ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (17) : 2929 - 2939
[8] Metal-Assisted Chemical Etching of Mesoporous Silicon - Optical Properties
Parnian Alasti
Mahboubeh Houshiar
Silicon, 2024, 16 : 1265 - 1272
[9] Metal-Assisted Chemical Etching of Mesoporous Silicon - Optical Properties
Alasti, Parnian
Houshiar, Mahboubeh
SILICON, 2024, 16 (03) : 1265 - 1272
[10] Ammonia detection using optical reflectance from porous silicon formed by metal-assisted chemical etching
Iatsunskyi, Igor
Smyntyna, Valentyn
Pavlenko, Mykolai
Kanevska, Olga
Kirik, Yuliia
Myndrul, Valeryi
OPTICS AND PHOTONICS FOR COUNTERTERRORISM, CRIME FIGHTING AND DEFENCE IX; AND OPTICAL MATERIALS AND BIOMATERIALS IN SECURITY AND DEFENCE SYSTEMS TECHNOLOGY X, 2013, 8901

← 1 2 3 4 5 →