Hot carrier effects in self-aligned and offset-gated polysilicon thin-film transistors

被引：0

作者：

Arpatzanis, N. ^{[1
]}

Hatzopoulos, A. T. ^{[1
]}

Tassis, D. H. ^{[1
]}

Dimitriadis, C. A. ^{[1
]}

Kamarinos, G. ^{[2
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] IMEP ENSERG, F-38016 Grenoble 1, France

来源：

MATERIAL AND DEVICES FOR SMART SYSTEMS II | 2006年 / 888卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of hot carriers on the transfer characteristics of self-aligned and offset-gated polysilicon thin-film transistors (TFTs), with channel length L = 10 mu m and offset length Delta L = 2 mu m, are investigated. In the self-aligned device, the on-state current is substantially reduced, whereas the subthreshold slope remains almost unaffected. In the offset gated device, the transfer characteristic is shifted first positively and then negatively, the on-state current is still substantially reduced and well-defined kinks are formed in the subthreshold region. The device degradation is found to become more pronounced in the offset gated device. A model explaining the post-stress performance of the offset-gated device is presented.

引用

页码：353 / +

页数：2

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