Effect of Annealing and Barrier Thickness on MgO-Based Co/Pt and Co/Pd Multilayered Perpendicular Magnetic Tunnel junctions

被引：18

作者：

Ye, Li-Xiu ^{[1
]}

Lee, Ching-Ming ^{[1
,2
]}

Syu, Jhin-Wei ^{[1
,3
]}

Wang, Yi-Rung ^{[1
]}

Lin, Kun-Wei ^{[4
]}

Chang, Yu-Hsiu ^{[4
]}

Wu, Te-ho ^{[1
,2
,3
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Taiwan SPIN Res Ctr, Touliu 64002, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Grad Sch Mat Sci, Touliu 64002, Taiwan

[3] Natl Yunlin Univ Sci & Technol, Grad Sch Optoelect, Touliu 64002, Taiwan

[4] Ind Technol Res Inst, Laser Applicat Technol Ctr, Tainan 734, Taiwan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2008年 / 44卷 / 11期

关键词：

Co/Pd; Co/Pt; MgO; perpendicular magnetic tunnel junction (pMTJ); tunneling magnetoresistance (TMR);

D O I：

10.1109/TMAG.2008.2001648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the effects of annealing conditions on the magnetic characteristics of multilayered perpendicular magnetic tunnel junctions (pMTJ) of the structures SiNx/Pt/(Co/Pd)(10)/MgO/(Co/Pt)(5)/Pt with various MgO barrier thicknesses were explored. We found that both the fixed and free layers exhibit coercivity growth with increasing annealing temperature. Insertion of a 0.4 nm Mg layer under the MgO barrier layer increases the corecivities further. Magnetoresistance measured by the current-in-plane tunneling (CIPT) method reveals that the insertion of Mg layers on both side of the MgO layer can increase the MR ratio by up to 32%.

引用

页码：3601 / 3604

页数：4

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