Parametric Dispersion and Amplification Characteristics of Hot Electron Driven Diffusive Semiconductor Plasmas

被引：0
|
作者：
Nimje, Nilesh [1 ]
Ghosh, S. [1 ]
机构：
[1] Vikram Univ, Sch Studies Phys, Ujjain 456010, Madhya Pradesh, India
来源：
PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013) | 2013年 / 1536卷
关键词：
High-field and nonlinear effects (Hot carrier); Nonlinear phenomena; Diffusion in solids; OSCILLATIONS; MODULATION;
D O I：
10.1063/1.4810630
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, an analytical expression for hot electron driven diffusion induced second-order susceptibility is obtained under non-resonant laser irradiation in magnetised semiconductor plasma. The hot electron effect due to intense pump modifies the momentum transfer collision frequency and diffusion coefficient which in turns enhances the dispersion as well as gain of the medium. The analysis deals with the qualitative behaviour of the anomalous parametric dispersion and the gain profile of the n-InSb semiconductor plasma.
引用
收藏
页码：1121 / 1122
页数：2
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