Impurity centers in LiF:Cu+ single crystals

被引：2

作者：

Nepomnyashchikh, A. I. ^{[1
]}

Shalaev, A. A. ^{[1
]}

Subanakov, A. K. ^{[2
]}

Paklin, A. S. ^{[1
]}

Bobina, N. S. ^{[1
]}

Myasnikova, A. S. ^{[1
]}

Shendrik, R. ^{[1
]}

机构：

[1] Inst Geochem SB RAS, Favorski Str 1A, Irkutsk 664033, Russia

[2] Baikal Inst Nat Management SB RAS, Ulan 670047, Russia

来源：

11TH EUROPHYSICAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS (EURODIM 2010) | 2010年 / 15卷

关键词：

LIF-MG; CU; P; PHOSPHOR; COPPER;

D O I：

10.1088/1757-899X/15/1/012043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The single crystals LiF with copper impurity were grown by Czochralski method. The concentrations of Cu in the crystals were 0,0004-0,002%. In order to determine a copper valence impurity, measurements of the ESR, emission, excitation and absorption spectra were performed. We found emission peak at 410 nm and excitation peak at 250 nm. In agreement with reference, these peaks point to presence of Cu+ in our samples. The mechanisms of capture and recombination providing process of thermoluminescence were recognized.

引用

页数：5

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