Applicability of the wide-band limit in DFT-based molecular transport calculations

被引:121
|
作者
Verzijl, C. J. O. [1 ]
Seldenthuis, J. S. [1 ]
Thijssen, J. M. [1 ]
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
来源
JOURNAL OF CHEMICAL PHYSICS | 2013年 / 138卷 / 09期
关键词
ELECTRONIC DEVICES; CONDUCTANCE; METALS; JUNCTIONS; SURFACES; SYSTEMS; STATES;
D O I
10.1063/1.4793259
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Transport properties of molecular junctions are notoriously expensive to calculate with ab initio methods, primarily due to the semi-infinite electrodes. This has led to the introduction of different approximation schemes for the electrodes. For the most popular metals used in experiments, such as gold, the wide-band limit (WBL) is a particularly efficient choice. In this paper, we investigate the performance of different WBL schemes relative to more sophisticated approaches including the fully self-consistent non-equilibrium Green's function method. We find reasonably good agreement between all schemes for systems in which the molecule (and not the metal-molecule interface) dominates the transport properties. Moreover, our implementation of the WBL requires negligible computational effort compared to the ground-state density-functional theory calculation of a molecular junction. We also present a new approximate but efficient scheme for calculating transport with a finite bias. Provided the voltage drop occurs primarily inside the molecule, this method provides results in reasonable agreement with fully self-consistent calculations. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793259]
引用
收藏
页数:10
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