Antenna-enhanced high harmonic generation in a wide-bandgap semiconductor ZnO

被引：0
|
作者：
Imasaka, Kotaro [1 ]
Kaji, Tomohiro [1 ]
Shimura, Tsutomu [1 ]
Ashihara, Satoshi [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
来源：
XXI INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA 2018 (UP 2018) | 2019年 / 205卷
基金：
日本学术振兴会;
关键词：
D O I：
10.1051/epjconf/201920502024
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate high harmonic generation (HHG) into deepUV range in a ZnO single crystal with resonant nanoantennas. Non-perturbative HUG is successfully induced by optical excitation of as low as 20 GW/cm(2). The spectral selection rule is found to reflect crystal symmetry, suggesting the possibility of nano-scaled EUV sources and band-structure reconstruction.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Enhanced conversion efficiency in wide-bandgap GaNP solar cells
    Sukrittanon, S.
    Liu, R.
    Ro, Y. G.
    Pan, J. L.
    Jungjohann, K. L.
    Tu, C. W.
    Dayeh, S. A.
    APPLIED PHYSICS LETTERS, 2015, 107 (15)
  • [32] High-Performance, Wide-Bandgap Power Electronics
    Ty McNutt
    Brandon Passmore
    John Fraley
    Brice McPherson
    Robert Shaw
    Kraig Olejniczak
    Alex Lostetter
    Journal of Electronic Materials, 2014, 43 : 4552 - 4559
  • [33] High-Performance, Wide-Bandgap Power Electronics
    McNutt, Ty
    Passmore, Brandon
    Fraley, John
    Mcpherson, Brice
    Shaw, Robert
    Olejniczak, Kraig
    Lostetter, Alex
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (12) : 4552 - 4559
  • [34] The future and challenges of wide bandgap ZnO semiconductor materials
    Zhang, Yue
    CHINESE SCIENCE BULLETIN-CHINESE, 2020, 65 (25): : 2662 - 2663
  • [35] Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature
    Nomoto, Kazuki
    Bader, Samuel James
    Lee, Kevin
    Bharadwaj, Shyam
    Hu, Zongyang
    Xing, Huili Grace
    Jena, Debdeep
    2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017,
  • [36] The world-wide market size and potential of wide-bandgap semiconductor power electronic devices
    Katz, A
    PROCEEDINGS OF THE SECOND SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1998, 97 (34): : 69 - 75
  • [37] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
    Fortunato, EMC
    Barquinha, PMC
    Pimentel, ACMBG
    Gonçalves, AMF
    Marques, AJS
    Martins, RFP
    Pereira, LMN
    APPLIED PHYSICS LETTERS, 2004, 85 (13) : 2541 - 2543
  • [38] A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
    Zhang, Boyi
    Wang, Shuo
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (01) : 626 - 643
  • [39] A review of the application of wide-bandgap semiconductor photocatalysts for CO2 reduction
    Arumugam, Malathi
    Yang, Hsi-Hsien
    JOURNAL OF CO2 UTILIZATION, 2024, 83
  • [40] The world-wide market size and potential of wide-bandgap semiconductor power electronic devices
    Katz, A
    PROCEEDINGS OF THE TWENTY-SEVENTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVII), 1997, 97 (21): : 64 - 70
12345