Modeling the Deterministic Chaos Microelectronic Oscillator Based on the Bipolar Transistor Structure with Negative Resistance

被引：0
|
作者：
Semenov, Andriy [1 ]
Osadchuk, Oleksandr [1 ]
机构：
[1] Vinnytsia Natl Tech Univ, Dept Radiofrequency Engn, Vinnytsia, Ukraine
来源：
2017 IEEE FIRST UKRAINE CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (UKRCON) | 2017年
关键词：
oscillator; chaos; negative resistance; transistor structure; mathematical model; IMPLEMENTATION; ATTRACTOR; CIRCUIT; DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper considers a new electric diagram of the microelectronic self-excited oscillator based on the bipolar transistor structure with negative resistance. The oscillator operates in oscillatory and relaxation modes. Chaotic mode of the self-excited oscillator was provided by installing additional components into a basic circuit. Results of the deterministic chaos microelectronic oscillator simulation were obtained. Simulation was performed with standard PSPICE models of radio components. Time and frequency characteristics of the oscillations were obtained.
引用
收藏
页码：704 / 708
页数：5
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