Stability of InP oxide versus solvated electrons in liquid ammonia

被引：1
|
作者：
Goncalves, A. -M. [1 ]
Simon, N. [1 ]
Channoug, S. [1 ]
Aureau, D. [1 ]
Mathieu, C. [1 ]
Etcheberry, A. [1 ]
机构：
[1] Univ Versailles, Inst Lavoisier ILV, CNRS UMR 8180, F-78000 Versailles, France
来源：
COMPTES RENDUS CHIMIE | 2013年 / 16卷 / 01期
关键词：
Non-aqueous solvent; Liquid ammonia; III-V semiconductor; Solvated electron; Interface; Oxide surface; N-INP;
D O I：
10.1016/j.crci.2012.01.010
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In alkaline aqueous medium (pH 9), potassium ferricyanide was used as an oxidizing agent on InP. This electroless process was successfully controlled by capacity measurements, AFM and XPS analyses. For the first time, the chemical stability of the oxide has been studied against the strongest reducing agent in liquid ammonia (-50 degrees C): the solvated electron. It was obtained in two ways; an electroless process which involved the addition of metallic potassium and by cathodic galvanostatic treatment on InP in neutral medium. As a first result, the electroless process required a strong rinsing step of the surface by pure liquid ammonia. As a second result, the galvanostatic process gave also promising results. A significant decrease of the amount of oxide was evidenced by capacity measurements, AFM and XPS analyses. (C) 2012 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
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页码：34 / 38
页数：5
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