Device modeling from first principles at the atomic level

被引：0
|
作者：
Chang, YC [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate that device modeling can be done with the use of planar Wannier functions directly constructed from first-principles, Example calculations for GaAs/AlAs heterostructures are illustrated. For a small-size superlattice, it is shown that the results obtained from using the planar Wannier functions are essentially identical to those obtained with the fully convergent plane-wave basis.
引用
收藏
页码：1175 / 1180
页数：6
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