Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors

被引:4
|
作者
Liborius, Lisa [1 ]
Bieniek, Jan [1 ]
Possberg, Alexander [1 ]
Tegude, Franz-Josef [1 ]
Prost, Werner [1 ]
Poloczek, Artur [1 ]
Weimann, Nils [1 ]
机构
[1] Univ Duisburg Essen, Components High Frequency Elect BHE, Lotharstr 55, D-47057 Duisburg, Germany
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2021年 / 258卷 / 02期
关键词
coaxial nanowires; heterojunction bipolar transistors; leakage currents; pn-junctions; tunneling; P-N-JUNCTIONS; OPTICAL CHARACTERIZATION; TEMPERATURE; DIODES; EFFICIENCY; INJECTION; DESIGN; LAYER;
D O I
10.1002/pssb.202000395
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Herein, a detailed analysis of leakage mechanisms in epitaxially grown nanowire heterojunction bipolar transistors (NW-HBTs) is presented. Coaxial npn-GaAs/InGaP core-multishell nanowires are grown via gold-catalyzed metalorganic vapor phase epitaxy, processed to three terminal devices and electrically characterized. The key for successful NW-HBT device functionality is the identification of tunneling as the dominant leakage mechanism in highly doped nanowire pn-junctions. The suppression of forward tunneling currents by adjustment of the tunneling barrier width reduces the junction leakage current density into the nA cm(-2)regime, which is further verified by tunneling-related electroluminescence measurements. In addition, the suppressed tunneling accordingly increases the number of electrons that are injected from the n-emitter into the p-base. The latter effect influences the performance of pn-junction based devices and is found to enable bipolar transistor functionality. Measured common emitter Gummel plots of the NW-HBT exhibit a current gain of up to 9 and the transistor function is additionally verified by current-controlled output characteristics.
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors
    Baca, AG
    Monier, C
    Chang, PC
    Briggs, RD
    Armendariz, MG
    Pearton, SJ
    SOLID-STATE ELECTRONICS, 2002, 46 (06) : 797 - 801
  • [22] On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors
    Fu, Ssu-I
    Cheng, Shiou-Ying
    Lai, Po-Hsien
    Tsai, Yan-Ying
    Hung, Ching-Wen
    Liu, Wen-Chau
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (1-3): : L74 - L76
  • [23] Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates
    Thomas, SG
    Johnson, ES
    Tracy, C
    Maniar, P
    Li, XL
    Roof, B
    Hartmann, Q
    Ahmari, DA
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) : 438 - 440
  • [24] Characterization of InGaP/GaAs heterojunction bipolar transistors with a heavily doped base
    Oka, T
    Ouchi, K
    Mochizuki, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9A): : 5221 - 5226
  • [25] Small InGaP/GaAs heterojunction bipolar transistors with high-speed operation
    Oka, T
    Ouchi, K
    Nakamura, T
    ELECTRONICS LETTERS, 1997, 33 (04) : 339 - 340
  • [26] Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors
    Chu, Kuei-Yi
    Cheng, Shiou-Ying
    Chen, Tzu-Pin
    Chen, Li-Yang
    Tsai, Tsung-Han
    Tsai, Jung-Hui
    Liu, Wen-Chau
    EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2008, : 176 - 178
  • [27] Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors
    Fu, Ssu-I
    Liu, Rong-Chau
    Cheng, Shiou-Ying
    Lai, Po-Hsien
    Tsai, Yan-Ying
    Hung, Ching-Wen
    Chen, Tzu-Pin
    Liu, Wen-Chau
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (03): : 691 - 696
  • [28] A new InGaP/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors
    Tsai, MK
    Wu, YW
    Tan, SW
    Chu, MY
    Chen, WT
    Yang, YJ
    Lour, WS
    COMMAD 2002 PROCEEDINGS, 2002, : 389 - 392
  • [29] Focused ion beam microscopy investigation of InGaP/GaAs heterojunction bipolar transistors
    Pidduck, AJ
    Reeves, C
    Williams, GM
    Crouch, MA
    Hayes, DG
    Hilton, K
    Parmiter, P
    Birbeck, J
    Schertel, A
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 585 - 588
  • [30] Fabrication and characterization of circular geometry InGaP/GaAs double heterojunction bipolar transistors
    Loga, R
    Vilches, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 404 - 407