Characterization of M-plane GaN thin film grown on pre-annealing β-LiGaO2 (100) substrate

被引：0

作者：

Shih, Cheng-Hung ^{[1
]}

Lo, Ikai ^{[1
]}

Wang, Ying-Chieh ^{[1
]}

Yang, Chen-Chi ^{[1
]}

Chou, Mitch M. C. ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Dept Mat & Optoelect Sci, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

来源：

THIN SOLID FILMS | 2012年 / 526卷

关键词：

M-plane gallium nitride; Molecular beam epitaxy; Lithium gallium oxide; NITRIDE;

D O I：

10.1016/j.tsf.2012.11.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The M-plane GaN thin films grown on pre-annealing LiGaO2 (100) substrates by plasma-assisted molecular-beam epitaxy have been characterized. The LiGaO2 (100) substrates were annealed in vacuum and in ambient air, respectively. The analyses of X-ray diffraction and Raman scattering measurements indicate that the crystal quality of M-plane GaN thin film grown on air-annealed LiGaO2 (100) substrate is improved and the compressive stress between M-plane GaN and LiGaO2 is reduced as well. The experimental results reveal that the thermal annealing LiGaO2 substrate in air can effectively suppress the formation of lithium-rich surface to grow a high-quality M-plane GaN thin film on LiGaO2 substrate. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：87 / 91

页数：5

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