Thermoelectric transport in V2O5 thin films

被引：2
|
作者：
Chumakov, Yu. [1 ,3 ]
Santos, J. R. [2 ]
Ferreira, I. [2 ]
Termentzidis, K. [1 ]
Pokropivny, A. [1 ]
Xiong, S. -Y. [1 ]
Cortona, P. [4 ]
Volz, S. [1 ]
机构：
[1] Ecole Cent Paris, Lab Energet Mol & Macroscop, UPR CNRS 288, F-92295 Chatenay Malabry, France
[2] Univ Nova Lisboa, Dept Ciencia Mat, CENIMAT I3N, P-2829516 Lisbon, Portugal
[3] Moldavian Acad Sci, Inst Appl Phys, Moldova, MD 2028 USA
[4] Ecole Cent Paris, UMR CNRS 8580, Lab Struct Proprietes & Modelisat Solides, F-92295 Chatenay Malabry, France
来源：
6TH EUROPEAN THERMAL SCIENCES CONFERENCE (EUROTHERM 2012) | 2012年 / 395卷
关键词：
D O I：
10.1088/1742-6596/395/1/012016
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The density functional theory and the Boltzmann transport equation were used to calculate the thermoelectric transport coefficients for bulk V2O5. We performed the structural relaxation for the given compound based on the ABINIT code. The temperature dependence of the Seebeck coefficient as well as of the electrical and thermal electron conductivities of the X-ray and relaxed structures displays an anisotropic behavior while the corresponding traces for both structures present similar values. The simulation results are compared with the electro-optical measurement of the thermoelectric properties of V2O5 thin films obtained by thermal evaporation with different post annealing treatments. A Seebeck coefficient of -218 mu V/K at T=573K was obtained in the in-plane direction for thin films with thickness less than 100nm.
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页数：6
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