Progress and Prospects of Spin Transfer Torque Random Access Memory

被引：28

作者：

Chen, E. ^{[1
]}

Apalkov, D. ^{[1
]}

Driskill-Smith, A. ^{[1
]}

Khvalkovskiy, A. ^{[1
]}

Lottis, D. ^{[1
]}

Moon, K. ^{[1
]}

Nikitin, V. ^{[1
]}

Ong, A. ^{[1
]}

Tang, X. ^{[1
]}

Watts, S. ^{[1
]}

Kawakami, R. ^{[1
]}

Krounbi, M. ^{[1
]}

Wolf, S. A. ^{[2
]}

Poon, S. J. ^{[2
]}

Lu, J. W. ^{[2
]}

Ghosh, A. W. ^{[2
]}

Stan, M. ^{[2
]}

Butler, W. ^{[3
]}

Mewes, Tim ^{[3
]}

Gupta, S. ^{[3
]}

Mewes, C. K. A. ^{[3
]}

Visscher, P. B. ^{[3
]}

Lukaszew, R. A. ^{[4
]}

机构：

[1] Grandis, Milpitas, CA 95035 USA

[2] Univ Virginia, Charlottesville, VA 22904 USA

[3] Univ Alabama, Tuscaloosa, AL 35487 USA

[4] Coll William & Mary, Williamsburg, VA 23187 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2012年 / 48卷 / 11期

关键词：

Magnetic tunnel junction (MTJ); nonvolatile memory (NVM); spin transfer torque (STT); STT-MRAM; STT-RAM;

D O I：

10.1109/TMAG.2012.2198451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report our progress on material improvement, device design, wafer processing, integration with CMOS, and testing of STT-RAM memory chips at 54 nm node with cell sizes of 14 and 28 F-2 (F = 54 nm). A dual tunnel barrier MTJ structure was found to have lower and more symmetric median spin transfer torque writing switching currents, and much tighter parallel to antiparallel switching current distribution. In-plane MTJ devices write endurance data, read and write soft error rates data and simulation fits, and solutions to the long write error rate tail at fast write speeds are discussed.

引用

页码：3025 / 3030

页数：6

共 50 条

[41] Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives
Fong, Xuanyao
Kim, Yusung
Yogendra, Karthik
Fan, Deliang
Sengupta, Abhronil
Raghunathan, Anand
Roy, Kaushik
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2016, 35 (01) : 1 - 22
[42] Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory
Roy, Urmimala
Pramanik, Tanmoy
Tsoi, Maxim
Register, Leonard F.
Banerjee, Sanjay K.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (22)
[43] Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)
Ando, K.
Fujita, S.
Ito, J.
Yuasa, S.
Suzuki, Y.
Nakatani, Y.
Miyazaki, T.
Yoda, H.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
[44] Publisher Correction: Spin-transfer torque magnetoresistive random access memory technology status and future directions
Daniel C. Worledge
Guohan Hu
Nature Reviews Electrical Engineering, 2025, 2 (1): : 71 - 71
[45] Design of LUT-Based LDPC Decoders for Spin-Transfer Torque Magnetic Random Access Memory
Duangthong, Chatuporn
Phakphisut, Watid
Supnithi, Pornchai
IEEE TRANSACTIONS ON MAGNETICS, 2022, 58 (08)
[46] Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory
Nguyen, Thien An
Lee, Jaejin
IEEE ACCESS, 2023, 11 : 114071 - 114079
[47] Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory
Deschenes, Austin
Muneer, Sadid
Akbulut, Mustafa
Gokirmak, Ali
Silva, Helena
BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2016, 7 : 1676 - 1683
[48] Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory
Sugiura, Kuniaki
Takahashi, Shigeki
Amano, Minoru
Kajiyama, Takeshi
Iwayama, Masayoshi
Asao, Yoshiaki
Shimomura, Naoharu
Kishi, Tatsuya
Ikegawa, Sumio
Yoda, Hiroaki
Nitayama, Akihiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (08) : 08HD021 - 08HD023
[49] Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory
Hu, Guohan
Nowak, Anusz J.
Gottwald, Atthias G.
Sun, Jonathan Z.
Houssameddine, Dimitri
Bak, Junghoon
Brown, Stephen L.
Hashem, Pouya
He, Qing
Kim, Juhyun
Kothandaraman, Chandrasekharan
Lauer, Gen
Lee, Hyun Koo
Suwannasiri, Thitima
Trouilloud, Philip L.
Worledge, Daniel C.
IEEE MAGNETICS LETTERS, 2019, 10
[50] Cascaded Channel Model, Analysis, and Hybrid Decoding for Spin-Torque Transfer Magnetic Random Access Memory
Cai, Kui
Immink, Kees A. Schouhamer
IEEE TRANSACTIONS ON MAGNETICS, 2017, 53 (11)

← 1 2 3 4 5 →