Characterization of Si/GexSi1-x structures by micro-Raman imaging

被引：42
|
作者：
Nakashima, S
Yamamoto, T
Ogura, A
Uejima, K
Yamamoto, T
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba Cent 2, Tsukuba, Ibaraki 3058568, Japan
[2] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki 3003294, Japan
[3] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2291198, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1695443
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GexSi1-x are characterized by Raman microspectroscopy. The strain of the 17.5-nm-thick Si layer was examined through deep UV Raman measurements. The depth profile of the GexSi1-x alloy composition and crystallinity was determined by visible Raman image measurement of the sample cross section. These measurements give results consistent with transmission electron microscopy and secondary ion mass spectrometry analyses. (C) 2004 American Institute of Physics.
引用
收藏
页码：2533 / 2535
页数：3
相关论文
共 50 条
  • [41] X-RAY TOPOGRAPHY OF THE COHERENCY BREAKDOWN IN GEXSI1-X/SI(100)
    EAGLESHAM, DJ
    KVAM, EP
    MAHER, DM
    HUMPHREYS, CJ
    GREEN, GS
    TANNER, BK
    BEAN, JC
    APPLIED PHYSICS LETTERS, 1988, 53 (21) : 2083 - 2085
  • [42] X-ray interference topography investigation of Si/GexSi1-x/Si(001) heterosystem
    Fedorov, AA
    Trukhanov, EM
    Vasilenko, AP
    Kolesnikov, AV
    Revenko, MA
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (10A) : A44 - A48
  • [43] Micro-Raman imaging of GaN hexagonal island structures
    Holtz, M
    Seon, M
    Prokofyeva, T
    Temkin, H
    Singh, R
    Dabkowski, FP
    Moustakas, TD
    APPLIED PHYSICS LETTERS, 1999, 75 (12) : 1757 - 1759
  • [44] GEXSI1-X OPTICAL DIRECTIONAL COUPLER
    MAYER, RA
    JUNG, KH
    HSIEH, TY
    KWONG, DL
    CAMPBELL, JC
    APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2744 - 2745
  • [45] HREM INVESTIGATION OF ELASTIC STRAIN IN GexSi1-x/Si(100)SUPERLATTICES
    余是东
    李齐
    王路春
    魏明
    冯端
    俞鸣人
    周国良
    褚一鸣
    Communication of State Key Laboratories of China, 1991, (05) : 420 - 425
  • [46] Free-standing submicrometre filament crystals of Si and GexSi1-x
    Inst of Semiconductor Physics, Kiev, Ukraine
    Microelectron J, 1 (13-22):
  • [47] HOLE CONFINEMENT IN MOS-GATED GEXSI1-X/SI HETEROSTRUCTURES
    GARONE, PM
    VENKATARAMAN, V
    STURM, JC
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) : 230 - 232
  • [48] DEMONSTRATION OF A P-CHANNEL BICFET IN THE GEXSI1-X/SI SYSTEM
    TAFT, RC
    PLUMMER, JD
    IYER, SS
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) : 14 - 16
  • [49] DEPENDENCE OF CRITICAL THICKNESS ON GROWTH TEMPERATURE IN GEXSI1-X/SI SUPERLATTICES
    MILES, RH
    MCGILL, TC
    CHOW, PP
    JOHNSON, DC
    HAUENSTEIN, RJ
    NIEH, CW
    STRATHMAN, MD
    APPLIED PHYSICS LETTERS, 1988, 52 (11) : 916 - 918
  • [50] GexSi1-x/Si异质结器件的研制现状
    李秀清
    半导体情报, 1993, (02) : 3 - 11
12345