Characterization of Si/GexSi1-x structures by micro-Raman imaging

被引：42
|
作者：
Nakashima, S
Yamamoto, T
Ogura, A
Uejima, K
Yamamoto, T
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba Cent 2, Tsukuba, Ibaraki 3058568, Japan
[2] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki 3003294, Japan
[3] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2291198, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1695443
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GexSi1-x are characterized by Raman microspectroscopy. The strain of the 17.5-nm-thick Si layer was examined through deep UV Raman measurements. The depth profile of the GexSi1-x alloy composition and crystallinity was determined by visible Raman image measurement of the sample cross section. These measurements give results consistent with transmission electron microscopy and secondary ion mass spectrometry analyses. (C) 2004 American Institute of Physics.
引用
收藏
页码：2533 / 2535
页数：3
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