The (111) oriented growth of C-60 films on GaAs(100) substrates

被引：18
|
作者：
Yao, JH [1 ]
Zou, YJ [1 ]
Zhang, XW [1 ]
Chen, GH [1 ]
机构：
[1] BEIJING POLYTECH UNIV,DEPT APPL PHYS,BEIJING 100022,PEOPLES R CHINA
来源：
THIN SOLID FILMS | 1997年 / 305卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
fullerene; oriented growth; X-ray diffraction; lattice match;
D O I：
10.1016/S0040-6090(97)00113-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have prepared entirely (111) oriented C-60 single crystal films on GaAs(100) using the vacuum vapor deposition technique with double temperature zone, and studied the structure and morphology of films using X-ray diffraction and scanning electron microscopy. The results show that the highly oriented growth of C-60 films occurred only at a narrow range of substrate temperature, higher or lower substrate temperature results in random orientation of grains. A preliminary explanation far experimental results is given and the growth mechanism of the C-60 single film is discussed. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：22 / 25
页数：4
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