Carrier Recombination at Metallic Precipitates in p-and n-Type Silicon

被引：20

作者：

Kwapil, Wolfram ^{[1
]}

Schoen, Jonas ^{[1
]}

Warta, Wilhelm ^{[1
]}

Schubert, Martin C. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 05期

关键词：

Charge carrier lifetime; metal precipitates; numerical simulation; semiconductor device modeling; MULTICRYSTALLINE SILICON; EDGE ZONE; LIFETIME; MODEL; IRON; GENERATION; EFFICIENCY;

D O I：

10.1109/JPHOTOV.2015.2438634

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A parameterized model is proposed in order to analytically calculate the metallic precipitate-related carrier recombination/lifetime that depends on excess carrier and doping concentration, as well as precipitate size and density in both p- and n-type silicon. The parameterization is based on numerical simulations of recombination at the precipitate-silicon interface, assuming that the dominant physical mechanism is thermionic emission currents due to internal Schottky contacts between metal (silicide) and semiconductor. Application examples and the range of validity of the proposed analytical calculation are discussed.

引用

页码：1285 / 1292

页数：8

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