Atom lithography with a holographic light mask -: art. no. 083601

被引:55
|
作者
Mützel, M
Tandler, S
Haubrich, D
Meschede, D
Peithmann, K
Flaspöhler, M
Buse, K
机构
[1] Univ Bonn, Inst Angew Phys, D-53115 Bonn, Germany
[2] Univ Osnabruck, Fachbereich Phys, D-49069 Osnabruck, Germany
关键词
D O I
10.1103/PhysRevLett.88.083601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In atom lithography with optical masks, deposition of an atomic beam on a given substrate is controlled by a standing light-wave field. The lateral intensity distribution of the light field is transferred to the substrate with nanometer scale. We have tailored a complex pattern of this intensity distribution through diffraction of a laser beam from a hologram that is stored in a photorefractive crystal. This method can be extended to superpose 1000 or more laser beams. The method is furthermore applicable during growth processes and thus allows full 3D structuring of suitable materials with periodic and nonperiodic patterns at nanometer scales.
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页数:4
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