Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

被引：85

作者：

Gupta, Shashank ^{[1
]}

Manik, Prashanth Paramahans ^{[2
]}

Mishra, Ravi Kesh ^{[2
]}

Nainani, Aneesh ^{[1
]}

Abraham, Mathew C. ^{[1
]}

Lodha, Saurabh ^{[2
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA 94085 USA

[2] Indian Inst Technol, Dept Elect Engn, Ctr Excellence Nanoelect, Bombay 400076, Maharashtra, India

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 23期

关键词：

ACTIVATION; DOPANTS; MODEL;

D O I：

10.1063/1.4811340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-induced-gap-states model for Fermi-level pinning in metal-semiconductor contacts has been extended to metal-interfacial layer (IL)-semiconductor (MIS) contacts using a physics-based approach. Contact resistivity simulations evaluating various ILs on n-Ge indicate the possibility of forming low resistance contacts using TiO2, ZnO, and Sn-doped In2O3 (ITO) layers. Doping of the IL is proposed as an additional knob for lowering MIS contact resistance. This is demonstrated through simulations and experimentally verified with circular-transfer length method and diode measurements on Ti/n(+)-ZnO/n-Ge and Ti/ITO/n-Ge MIS contacts. (C) 2013 AIP Publishing LLC.

引用

页数：7

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