Luminescence response of CsI:Na to electron pulse irradiation

被引:2
|
作者
Yakovlev, V. [1 ]
Trefilova, L. [2 ]
Karnaukhova, A. [1 ]
Ganja, Yu. [1 ]
机构
[1] Tomsk Polytech Univ, Tomsk 634034, Russia
[2] Inst Scintillat Mat, UA-61001 Kharkov, Ukraine
关键词
Sodium-doped cesium iodide; Scintillation pulse shape; Recombination process; Na-bound two halide exciton; CRYSTALS; ABSORPTION; CENTERS; BEAM;
D O I
10.1016/j.radmeas.2013.01.003
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
This paper investigates the influence of activator concentration and temperature on the scintillation process in CsI:Na crystal which was excited by a pulsed electron beam (E-ex = 0.25 MeV, t(1/2) = 15 ns, W = 0.003...0.16 J/cm(2)) at temperature within 77-300 K. It has been established that the transition of Na-bound two halide exciton from singlet state causes 3 eV emission of CsI:Na. The capturing of V-k by Na+ ion determines the scintillation pulse shape. Thermal liberation of V-k from V-kA centers results in an inertial rise of the emission pulse in lightly activated CsI:Na and in a mono-exponential decay of the emission pulse in heavily activated CsI:Na. The value of thermal dissociation energy of V-kA centers is 0.24 +/- 0.01 eV, which was obtained from the temperature dependences of the emission decay time constant for CsI:2.8.10(-3)%Na and of the rise time constant for CsI:2.0.10(-4)%Na. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:13 / 17
页数:5
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