Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

被引：24

作者：

Boige, F. ^{[1
]}

Tremouilles, D. ^{[2
]}

Richardeau, F. ^{[1
]}

机构：

[1] Univ Toulouse, CNRS, INPT, UPS,LAPLACE Lab, F-31000 Toulouse, France

[2] Univ Toulouse, CNRS, LAAS, F-31000 Toulouse, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 05期

关键词：

4H-SiC MOSFET; short-circuit; gate oxide; Schottky emission; Fowler-Nordheim; TEMPERATURE-DEPENDENCE; OXIDE; PLANAR; DEVICES;

D O I：

10.1109/LED.2019.2896939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.

引用

页码：666 / 669

页数：4

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