The structure of hydrogenated microcrystalline silicon (pc-Si:H) TFTs deposited by PECVD

Hydrogenated microcrystalline silicon (Pc-Si.,H) TFTs are prepared by PECVD with the controlling factors of this experiments included SiH4/H2 gas flow rate, RF power, and pressure, respectively. The surface morphology of pc-Si:H thin film after secco etching are observed by SEM and AFM, and grain size is about 20-30nm. The behaviors of the threshold voltage and field-effect mobility of mu c-Si:H TFTs under the bias gate stress, light illuminated and thermal stress experiments indicates unobvious difference to the a-Si TFTs. The crystallization distribution by the Raman spectrometer and HRTEM image, it is proven the transistor channel between the mu c-Si and SiNx interface its structure was still the amorphous state.