Influence of piezoelectric film and electrode materials on film bulk acoustic-wave resonator characteristics

被引:9
|
作者
Tay, KW
Huang, CL
Wu, L
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[2] F Tech Corp, Tainan 741, Taiwan
关键词
FBAR; Mason model; thin film; piezoelectric; frequency;
D O I
10.1143/JJAP.43.1122
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study adopts the one-dimensional Mason model and basic transmission line theory to investigate the influence of different piezoelectric films and electrode materials on the characteristics of a thin film bulk acoustic-wave resonator (FBAR). The influences of different electrodes, piezoelectric films, and supporting membrane thicknesses are also explored. The results confirm that the material properties and thickness of the piezoelectric film play a significant role in determining the performance of the FBAR, and influence such characteristics as the resonant frequency, the bandwidth, and the insertion loss. Therefore, the choice of piezoelectric material has a pronounced influence upon the subsequent design of the FBAR filter. Since the results also demonstrate that the resonant frequency of the FBAR is influenced by the thickness of each of the layers within the acoustic wave path, and by the resonance area, the potential exists to tune the characteristics of the FBAR by specifying appropriate geometric parameters during the FBAR design stage.
引用
收藏
页码:1122 / 1126
页数:5
相关论文
共 50 条
  • [31] Characteristics of ZnO thin film by atomic layer deposition for film bulk acoustic resonator
    Kim, SG
    Jung, SB
    Oh, JH
    Kim, HJ
    Shin, YH
    DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 : 977 - 980
  • [32] Thin film piezoelectric property considerations for surface acoustic wave and thin film bulk acoustic resonators
    Kirby, PB
    Potter, MDG
    Williams, CP
    Lim, MY
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2003, 23 (14) : 2689 - 2692
  • [33] The influence of ZnO and electrode thickness on the performance of thin film bulk acoustic wave resonators
    Osbond, P
    Beck, CM
    Brierley, CJ
    Cox, MR
    Marsh, SP
    Shorrocks, NM
    1999 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 1999, : 911 - 914
  • [34] Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review
    Liu, Yan
    Cai, Yao
    Zhang, Yi
    Tovstopyat, Alexander
    Liu, Sheng
    Sun, Chengliang
    MICROMACHINES, 2020, 11 (07)
  • [35] ELECTRON ABSORPTION OF SURFACE ACOUSTIC-WAVE IN PIEZOELECTRIC-METALLIC FILM STRUCTURE
    SEREIKA, AP
    GARSHKA, EP
    MILKYAVI.ZA
    YUTSIS, AI
    FIZIKA TVERDOGO TELA, 1974, 16 (08): : 2415 - 2417
  • [36] Preparation and piezoelectric properties analysis of ZnO films for film bulk acoustic resonator
    Prof. (bhyang@tjut.edu.cn), 1600, Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China (24):
  • [37] Simulation and Research of Piezoelectric Film Bulk Acoustic Resonator Based on Mason Model
    Xu, Lin
    Wu, Xiushan
    Zeng, Yuqi
    2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021), 2021, : 184 - 188
  • [38] Thin film bulk acoustic wave resonator (TFBAR) gas sensor
    Benetti, M
    Cannatà, D
    D'Amico, A
    Di Pietrantonio, F
    Foglietti, V
    Verona, E
    2004 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-3, 2004, : 1581 - 1584
  • [39] FABRICATION OF BULK ACOUSTIC WAVE RESONATOR BASED ON ALN THIN FILM
    Yang, Jie
    Jiao, Xiang-quan
    Zhang, Rui
    Zhong, Hui
    Shi, Yu
    PROCEEDINGS OF THE 2012 SYMPOSIUM ON PIEZOELECTRICITY, ACOUSTIC WAVES AND DEVICE APPLICATIONS (SPAWDA12), 2012, : 191 - 194
  • [40] The effects of temperature, relative humidity and reducing gases on the ultraviolet response of ZnO based film bulk acoustic-wave resonator
    Qiu, Xiaotun
    Tang, Rui
    Zhu, Jie
    Oiler, Jon
    Yu, Cunjiang
    Wang, Ziyu
    Yu, Hongyu
    SENSORS AND ACTUATORS B-CHEMICAL, 2011, 151 (02) : 360 - 364