Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

被引：35
|
作者：
Kang, Jung Han [1 ]
Cho, Edward Namkyu [1 ]
Kim, Chang Eun [2 ]
Lee, Min-Jung [3 ]
Lee, Su Jeong [3 ]
Myoung, Jae-Min [3 ]
Yun, Ilgu [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[2] LG Display Co Ltd, Paju Si 413811, Gyeonggi Do, South Korea
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 22期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1063/1.4809727
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (L-p). From the L-p-dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed. (C) 2013 AIP Publishing LLC.
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页数：3
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