Introduction to the Growth of Bulk Single Crystals of Two-Dimensional Transition-Metal Dichalcogenides

被引:39
|
作者
Ueno, Keiji [1 ]
机构
[1] Saitama Univ, Grad Sch Sci & Engn, Dept Chem, Saitama 3388570, Japan
基金
日本学术振兴会;
关键词
TRANSPORT-PROPERTIES; INTEGRATED-CIRCUITS; CHEMICAL-TRANSPORT; LAYER COMPOUNDS; MOS2; WSE2; MOLYBDENUM; TUNGSTEN; TRANSISTORS; SNS2;
D O I
10.7566/JPSJ.84.121015
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Semiconducting two-dimensional transition-metal dichalcogenides (MX2) are attracting much attention as promising materials for a new generation of optical and electronic devices. MX2 compounds are complementary or competitive to graphene because of the existence of a native band gap. The growth of large and high-quality bulk single crystals is one of the critical issues for the application of MX2 compounds, whose bulk crystals are generally grown by the chemical vapor transport (CVT) method. In the present review, I introduce experimental techniques required for the CVT growth of high-quality MX2 single crystals.
引用
收藏
页数:6
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