Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure

被引：2
|
作者：
Guseinov, A. G. [1 ]
Salmanov, V. M. [1 ]
Mamedov, R. M. [1 ]
Salmanova, A. A. [2 ]
Akhmedova, F. M. [1 ]
机构：
[1] Baku State Univ, AZ-1148 Baku, Azerbaijan
[2] Azerbaijan State Oil & Ind Univ, AZ-1010 Baku, Azerbaijan
来源：
OPTICS AND SPECTROSCOPY | 2019年 / 126卷 / 05期
关键词：
D O I：
10.1134/S0030400X19050102
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p-GaS/n-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current-voltage, optical, photoelectric, and luminescence characteristics of p-GaS/n-InSe heterojunctions have been experimentally investigated.
引用
收藏
页码：458 / 462
页数：5
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