Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure

被引：2
|
作者：
Guseinov, A. G. [1 ]
Salmanov, V. M. [1 ]
Mamedov, R. M. [1 ]
Salmanova, A. A. [2 ]
Akhmedova, F. M. [1 ]
机构：
[1] Baku State Univ, AZ-1148 Baku, Azerbaijan
[2] Azerbaijan State Oil & Ind Univ, AZ-1010 Baku, Azerbaijan
来源：
OPTICS AND SPECTROSCOPY | 2019年 / 126卷 / 05期
关键词：
D O I：
10.1134/S0030400X19050102
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p-GaS/n-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current-voltage, optical, photoelectric, and luminescence characteristics of p-GaS/n-InSe heterojunctions have been experimentally investigated.
引用
收藏
页码：458 / 462
页数：5
相关论文
共 50 条
  • [1] Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure
    A. G. Guseinov
    V. M. Salmanov
    R. M. Mamedov
    A. A. Salmanova
    F. M. Akhmedova
    Optics and Spectroscopy, 2019, 126 : 458 - 462
  • [2] Optical properties of nanostructured InSe thin films
    El-Nahass, M. M.
    Saleh, Abdul-Basit A.
    Darwish, A. A. A.
    Bahlol, M. H.
    OPTICS COMMUNICATIONS, 2012, 285 (06) : 1221 - 1224
  • [3] SOME ELECTRICAL AND OPTICAL PROPERTIES OF INSE THIN FILMS
    PERSIN, M
    CELUSTKA, B
    MARKOVIC, B
    PERSIN, A
    THIN SOLID FILMS, 1970, 5 (02) : 123 - &
  • [4] ELECTRIC AND PHOTOELECTRIC PROPERTIES OF GAS0.4SE0.6-INSE HETEROJUNCTIONS
    KYAZYMZADE, AG
    SAMEDOV, ZS
    GASANOVA, FA
    TAGIROV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 697 - 698
  • [5] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GAS0.6SE0.4-INSE HETEROJUNCTIONS
    BAGIROV, AG
    BAGIROV, SY
    SALAEV, EY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 703 - 704
  • [6] Optical and photoelectrical properties of GaS and CdTe thin FILMS, components of GaS/CdTe heterojunctions
    Cuculescu, E.
    Evtodiev, I.
    Caraman, M.
    Rusu, M.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2006, 8 (03): : 1077 - 1081
  • [7] Morphological and nonlinear optical properties of Al:InSe thin films
    Yan, Xiaoyan
    Wu, Xinzhi
    Fan, Yu
    Zhang, Sirui
    Chen, Wenyong
    Ya, Chengbao
    Wang, Yuxiao
    Zhang, Xueru
    Song, Yinglin
    OPTICAL MATERIALS EXPRESS, 2019, 9 (07): : 2955 - 2963
  • [8] PHOTOELECTRIC AND OPTICAL PROPERTIES OF THIN ALKALI METAL FILMS
    MAYER, H
    BLANARU, DL
    STEFFEN, H
    THIN SOLID FILMS, 1970, 5 (5-6) : 389 - &
  • [9] Effect of annealing on the structural and optical properties of InSe bilayer thin films
    Matheswaran, P.
    Kumar, R. Saravana
    Sathyamoorthy, R.
    VACUUM, 2011, 85 (08) : 820 - 826
  • [10] Impact of Argon gas on optical and electrical properties of Carbon thin films
    Usman, Arslan
    Rafique, M. S.
    Shaukat, S. F.
    Siraj, Khurram
    Ashfaq, Afshan
    Anjum, Safia
    Imran, Muhammad
    Sattar, Abdul
    PHYSICA B-CONDENSED MATTER, 2016, 503 : 157 - 161
12345