Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors

被引：10

作者：

Kong, Eugene Y. -J. ^{[1
]}

Ivana ^{[1
]}

Zhang, Xingui ^{[1
]}

Zhou, Qian ^{[1
]}

Pan, Jisheng ^{[2
]}

Zhang, Zheng ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

SOLID-STATE ELECTRONICS | 2013年 / 85卷

基金：

新加坡国家研究基金会;

关键词：

Palladium; InGaAs; Pd-InGaAs; III-V; WORK FUNCTION; TECHNOLOGY; RESISTANCE; MOSFETS; LEAKAGE; DESIGN; SCHEME; COSI2; TISI2;

D O I：

10.1016/j.sse.2013.02.036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation of salicide-like source/drain contacts on III-V MOSFETs necessitates a search for suitable metals that can react with III-V materials to form ohmic contacts with low sheet resistance and contact resistivity. To advance this search, the reaction between Pd and In0.53Ga0.47As is explored in this work. Reaction temperatures ranging from 200 to 400 degrees C were investigated, and extensive physical and electrical characterization was performed. Pd completely reacts with In0.53Ga0.47As after annealing at temperatures as low as 200 degrees C for 60 s to form a very smooth and uniform Pd-InGaAs film with good interfacial quality. Pd-InGaAs formed at 250 degrees C was found to have a work function of similar to 4.6 +/- 0.1 eV, sheet resistance of similar to 77.3 Omega/square for a thickness of 20 nm, and contact resistivity of similar to 8.35 x 10(-5) Omega cm(2) on In0.53Ga0.47As with n-type active doping concentration of similar to 2 x 10(18) cm(-3). With further development, Pd-InGaAs could potentially be useful as self-aligned contacts for InGaAs transistors. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：36 / 42

页数：7

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