Observation of in situ B-doped Epitaxial Ge Layer Growth on Si(111) by Ultra-high Vacuum Chemical Vapor Deposition

被引：0
|
作者：
Kim, Byongju [1 ]
Jang, Hyunchul [1 ]
Byeon, Dae-Seop [1 ]
Koo, Sangmo [1 ]
Ko, Dae-Hong [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Coll Engn, Seoul 120749, South Korea
来源：
2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) | 2014年
关键词：
SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：77 / 78
页数：2
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