Improved thermal stability of wet-oxidized AlAs

被引：18
|
作者：
Jia, HQ
Chen, H
Wang, WC
Wang, WX
Li, W
Huang, Q
Zhou, JM
Xue, QK
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 10080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期
关键词：
D O I：
10.1063/1.1448166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lateral thermal wet oxidization of the AlAs layer in a GaAs/AlAs/GaAs sandwiched structure is studied by Raman spectroscopy and Nomarski microscopy. A significant improvement in thermal stability of the oxidized AlAs layer has been achieved by optimizing the oxidation conditions, which can be used to fabricate reliable devices. We show that the thermal stability is strongly related to the removal of volatile products, such as As and As2O3, as evidenced by the Raman spectroscopy measurement. (C) 2002 American Institute of Physics.
引用
收藏
页码：974 / 976
页数：3
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