Improved thermal stability of wet-oxidized AlAs

被引：18
|
作者：
Jia, HQ
Chen, H
Wang, WC
Wang, WX
Li, W
Huang, Q
Zhou, JM
Xue, QK
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 10080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期
关键词：
D O I：
10.1063/1.1448166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lateral thermal wet oxidization of the AlAs layer in a GaAs/AlAs/GaAs sandwiched structure is studied by Raman spectroscopy and Nomarski microscopy. A significant improvement in thermal stability of the oxidized AlAs layer has been achieved by optimizing the oxidation conditions, which can be used to fabricate reliable devices. We show that the thermal stability is strongly related to the removal of volatile products, such as As and As2O3, as evidenced by the Raman spectroscopy measurement. (C) 2002 American Institute of Physics.
引用
收藏
页码：974 / 976
页数：3
相关论文
共 50 条
  • [1] Compositional abruptness of wet-oxidized AlAs/GaAs interface
    Takamori, T
    Takemasa, K
    Kamijoh, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 705 - 709
  • [2] Compositional abruptness of wet-oxidized AlAs/GaAs interface
    Oki Electric Industry Co, Ltd, Tokyo, Japan
    Appl Surf Sci, (705-709):
  • [3] PROFILES OF HYDROGEN IN WET-OXIDIZED SILICON
    BREED, DJ
    DOREMUS, H
    AMERICAN CERAMIC SOCIETY BULLETIN, 1977, 56 (03): : 329 - 329
  • [4] Improvement of wet-oxidized AlxGa1-xAs (x∼1) through the use of AlAs/GaAs digital alloys
    Pickrell, GW
    Epple, JH
    Chang, KL
    Hsieh, KC
    Cheng, KY
    APPLIED PHYSICS LETTERS, 2000, 76 (18) : 2544 - 2546
  • [5] The study of thermal stability during wet oxidation of AlAs
    Jia, HQ
    Chen, H
    Wang, WC
    Wang, WX
    Li, W
    Huang, Q
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 2001, 223 (04) : 484 - 488
  • [6] Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time
    Chen, JF
    Hsiao, RS
    Hung, WK
    Wang, JS
    Chi, JY
    Yu, HC
    Su, YK
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)
  • [7] Ethanol production from maize silage as lignocellulosic biomass in anaerobically digested and wet-oxidized manure
    Oleskowicz-Popiel, Piotr
    Lisiecki, Przemyslaw
    Holm-Nielsen, Jens Bo
    Thomsen, Anne Belinda
    Thomsen, Mette Hedegaard
    BIORESOURCE TECHNOLOGY, 2008, 99 (13) : 5327 - 5334
  • [8] Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors
    Takhar, Kuldeep
    Meer, Mudassar
    Upadhyay, Bhanu B.
    Ganguly, Swaroop
    Saha, Dipankar
    SOLID-STATE ELECTRONICS, 2017, 131 : 39 - 44
  • [9] Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide
    Kita, Koji
    Hirai, Hirohisa
    Kajifusa, Hiroyuki
    Kuroyama, Kohei
    Ishinoda, Kei
    MICROELECTRONIC ENGINEERING, 2017, 178 : 186 - 189
  • [10] Oxidation kinetics and microstructure of wet-oxidized MBE-grown short-period AIGaAs superlattices
    Todt, R
    Dovidenko, K
    Katsnelson, A
    Tokranov, V
    Yakimov, M
    Oktyabrsky, S
    PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 561 - 566
12345