Pulsed magnetron sputtering of reactive compounds

被引：32
|
作者：
Posadowski, WM [1 ]
机构：
[1] Wroclaw Tech Univ, Inst Microsyst Technol, PL-50372 Wroclaw, Poland
来源：
THIN SOLID FILMS | 1999年 / 343卷
关键词：
unipolar pulsed magnetron sputtering; reactive deposition;
D O I：
10.1016/S0040-6090(98)01580-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Al, Si and Ti targets were sputtered in a reactive atmosphere of argon & oxygen and argon&nitrogen. The pulsed magnetron power supply generated a series of one polarity 160 kHz pulses grouped with 2.5 kHz. The amplitude of negative current pulses was constant and equal to 8 A. Target power was accomplished by varying the number of pulses within an interval. The relations between target surface contamination with reactive compounds and power supply parameters were investigated. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：85 / 89
页数：5
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