Manifestation of Band Structure in Tunnel Characteristics of Metal-Insulator-Metal Heterojunctions

被引：0
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作者：
Khachaturova, T. A.
Belogolovsky, M. A.
Khachaturov, A. I.
机构：
来源：
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2008年 / 30卷 / 07期
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T [工业技术];
学科分类号：
08 ;
摘要：
Current-voltage characteristics of tunnel metal-insulator-metal heterostructures, where the dispersion relationship within the dielectric layer is described with a two-band Franz-Kane approximation, are calculated. As shown, in such junctions, current is a monotonically increasing function of voltage only in the case when the Fermi level is disposed in the upper half of the forbidden band. Otherwise, current-versus-voltage curves can contain ranges of negative differential resistance.
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页码：899 / 904
页数：6
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