Energy and Charge Transport in 2D Atomic Layer Materials: Raman-Based Characterization

被引:9
|
作者
Wang, Ridong [1 ]
Wang, Tianyu [2 ]
Zobeiri, Hamidreza [3 ]
Li, Dachao [1 ]
Wang, Xinwei [3 ]
机构
[1] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, Tianjin 300072, Peoples R China
[2] Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
[3] Iowa State Univ, Dept Mech Engn, Ames, IA 50011 USA
基金
国家重点研发计划; 美国国家科学基金会;
关键词
2D materials; energy transport; charge transport; Raman spectroscopy; HOT-CARRIER DIFFUSION; STATE-RESOLVED RAMAN; THERMAL-CONDUCTIVITY; PHONON TRANSPORT; GRAPHENE; MOS2; TEMPERATURE; CONDUCTANCE;
D O I
10.3390/nano10091807
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As they hold extraordinary mechanical and physical properties, two-dimensional (2D) atomic layer materials, including graphene, transition metal dichalcogenides, and MXenes, have attracted a great deal of attention. The characterization of energy and charge transport in these materials is particularly crucial for their applications. As noncontact methods, Raman-based techniques are widely used in exploring the energy and charge transport in 2D materials. In this review, we explain the principle of Raman-based thermometry in detail. We critically review different Raman-based techniques, which include steady state Raman, time-domain differential Raman, frequency-resolved Raman, and energy transport state-resolved Raman techniques constructed in the frequency domain, space domain, and time domain. Detailed outlooks are provided about Raman-based energy and charge transport in 2D materials and issues that need special attention.
引用
收藏
页码:1 / 22
页数:22
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