Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure

被引：1
|
作者：
Jang, DH
Lee, JK
Park, KH
Cho, HS
Seong, TY
Park, CS
Pyun, KE
机构：
[1] KWANGJU INST SCI & TECHNOL, DEPT MAT SCI & ENGN, KWANGJU 506303, SOUTH KOREA
[2] KWANGJU INST SCI & TECHNOL, CTR ELECT MAT RES, KWANGJU 506303, SOUTH KOREA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 10B期
关键词：
impurity-induced layer disordering (IILD); implantation; quantum well; transmission electron microscopy (TEM);
D O I：
10.1143/JJAP.36.L1364
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impurity-induced layer disordering in B- or Si-implanted Ga0.8In0.2As/GaalphaIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure has been studied. The wavelength shift of the photoluminescence peak and the degree of intermixing can be determined by the type and energy of implanted ions with followed annealing at the temperature of 900 degrees C. A photoluminesceuce peak shift of 70 meV was obtained by 120 keV Si-implantation and annealing at 900 degrees C. The diffused interface was also studied by cross sectional transmission electron microscopy.
引用
收藏
页码：L1364 / L1366
页数：3
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