High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAsy P1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels

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作者
Jang, Dong Hoon [1 ]
Lee, Jung Kee [1 ]
Park, Kyung Hyun [1 ]
Cho, Ho Sung [1 ]
Nam, Eun Soo [1 ]
Park, Chul Soon [1 ]
Shim, Jong In [1 ]
Jeong, Ji Chai [1 ]
Jeong, Ki Tae [1 ]
Park, Soo Jin [1 ]
机构
[1] Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 08期
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页码:4756 / 4763
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  • [1] High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels
    Jang, DH
    Lee, JK
    Park, KH
    Cho, HS
    Nam, ES
    Park, CS
    Shim, JI
    Jeong, JC
    Jeong, KT
    Park, SJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (08): : 4756 - 4763
  • [2] Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsy P1-y/Ga0.51In0.49P/GaAs quantum well structure
    Jang, Dong Hoon
    Lee, Jung Kee
    Park, Kyung Hyun
    Cho, Ho Sung
    Seong, Tae-Yeon
    Park, Chul Soon
    Pyun, Kwang-Eui
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (10 B):
  • [3] Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure
    Jang, DH
    Lee, JK
    Park, KH
    Cho, HS
    Seong, TY
    Park, CS
    Pyun, KE
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (10B): : L1364 - L1366
  • [4] Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy
    Seong, TY
    Kim, DG
    Jang, DH
    Lee, JK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11): : 5607 - 5611