共 4 条
- [1] High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (08): : 4756 - 4763
- [2] Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsy P1-y/Ga0.51In0.49P/GaAs quantum well structure Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (10 B):
- [3] Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (10B): : L1364 - L1366
- [4] Ordering and associated domain structures in zinc and silicon doped Ga0.51In0.49P and GaxIn1-xAsyP1-y layers grown on GaAs by metalorganic vapour phase epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11): : 5607 - 5611