Investigation of the Photosensitivity of Narrow-Gap and Gapless HgCdTe Solid Solutions in the Terahertz and Sub-Terahertz Range

被引：2
|
作者：
Rumyantsev, V. V. [1 ,2 ]
Maremyanin, K. V. [1 ,2 ]
Razova, A. A. [1 ,2 ]
Sergeev, S. M. [1 ]
Mikhailov, N. N. [3 ]
Dvoretskii, S. A. [3 ]
Gavrilenko, V. I. [1 ,2 ]
Morozov, S. V. [1 ,2 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[3] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2020年 / 54卷 / 09期
基金：
俄罗斯科学基金会;
关键词：
terahertz radiation; HgCdTe; photoelectric detectors; photoconductivity; IMPURITY-PHOTOCONDUCTIVITY; TEMPERATURE-DEPENDENCE; CARRIER LIFETIME; RELAXATION; HG1-XCDXTE; FEATURES; HISTORY;
D O I：
10.1134/S1063782620090249
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photoresponse is investigated in the frequency range of 0.15-15 THz in HgCdTe epitaxial layers with a cadmium concentration from 15.2 to 19.2% grown by molecular-beam epitaxy. It is shown that narrow-gap and gapless HgCdTe solid solutions can be used as detectors of both terahertz and sub-terahertz radiation with a characteristic response time of 2-4 ns and with a sensitivity approachingn-InSb-based detectors widely used in this range.
引用
收藏
页码：1096 / 1102
页数：7
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