Formation and distribution of compounds at the Ru-Si(001) ultrathin film interface

被引：13

作者：

Pasquali, L. ^{[1
,2
]}

Mahne, N. ^{[2
]}

Montecchi, M. ^{[1
,2
]}

Mattarello, V. ^{[3
]}

Nannarone, S. ^{[1
,2
]}

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

[2] CNR, Lab TASC, INFM, I-34012 Trieste, Italy

[3] Media Lario Technol, I-23842 Bosisio Parini, LC, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 04期

关键词：

annealing; chemical interdiffusion; elemental semiconductors; interface structure; ruthenium; semiconductor-metal boundaries; silicon; ultraviolet photoelectron spectra; X-ray photoelectron spectra; RUTHENIUM-SILICON SYSTEM; SEMICONDUCTING RU2SI3; SINGLE-CRYSTALS; THIN-FILMS; SILICIDES; SURFACES; SI(100); SI(111); OXYGEN; TRANSITION;

D O I：

10.1063/1.3079507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interface formation between Ru and Si(001) has been studied by x-ray and ultraviolet photoemissions. The film properties were investigated, for metal deposition at room temperature, as a function of the Ru film thickness and as a function of the annealing temperature of a thick grown film. From the evolution of the Ru and Si core levels, we find that alloying takes place at the interface during growth and estimate the thickness of the intermixed region to be of the order of 15-20 ML. Annealing at increasingly high temperatures causes the formation of different silicide phases, which are discussed in relation to theoretical and experimental data on related transition metal silicides.

引用

页数：6

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