High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate

被引：0

作者：

Zhou, Zhiqingg ^{[1
]}

Liu, Meihua ^{[1
]}

Lin, Xinnan ^{[1
]}

机构：

[1] Peking Univ, Shenzhen Key Lab Adv Electron Device & Integrat E, Shenzhen Grad Sch, Shenzhen, Peoples R China

来源：

2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年

关键词：

AlGaN/GaN; sehottky barrier diodes; floating gate;

D O I：

10.1109/isne.2019.8896374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (V-ON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.

引用

页数：2

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