Influence of Al on the growth of NiSi2 on Si(001)

被引：10
作者：
Allenstein, F [1 ]
Budzinski, L
Hirsch, D
Mogilatenko, A
Beddies, G
Grötzschel, R
Hinneberg, HJ
机构：
[1] Chemnitz Univ Technol, Inst Phys, D-09107 Chemnitz, Germany
[2] Res Ctr Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 3-4期
关键词：
nickel; aluminium; silicon; intermetallics; nickel disilicide; TEM; RBS;
D O I：
10.1016/j.mee.2005.07.045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of different atomic ratios of nickel and aluminium were deposited on Si(001)-wafers by magnetron cosputtering. The content of deposited nickel complies to layer thickness of about 20 nm, After deposition the samples were annealed between 500 and 900 degrees C in steps of 100 degree using rapid thermal annealing (RTA) in N-2 ambient. RBS, SEM, TEM, XRD, AES and sheet resistance measurements were performed to characterize the grown thin films. (c) 2005 Elsevier B.V. All rights reserved.
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页码：474 / 478
页数：5
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