SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES

被引：80

作者：

COE, DJ ^{[1
]}

RHODERICK, EH ^{[1
]}

机构：

[1] UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECT ENGN & ELECTR, MANCHESTER, ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 06期

关键词：

D O I：

10.1088/0022-3727/9/6/009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：965 / 972

页数：8

共 19 条

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[3]

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[6]

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[7] EFFECTS OF SILICON SURFACE CONDITIONS ON NICKEL-SILICON CONTACTS [J].

ITOH, Y .

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[8] SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].

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SZE, SM .

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[9]

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[10]

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