In situ growth of SiC nanowires on RS-SiC substrate(s)

被引：47

作者：

Yang, W ^{[1
]}

Araki, H ^{[1
]}

Hu, QL ^{[1
]}

Ishikawa, N ^{[1
]}

Suzuki, H ^{[1
]}

Noda, T ^{[1
]}

机构：

[1] MicroNano Component Mat Grp, Natl Inst Mat Sci, Mat Engn Lab, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 264卷 / 1-3期

关键词：

growth models; low dimensional structures; nanostructures; chemical vapor growth; reinforcement materials; semiconducting silicon carbide;

D O I：

10.1016/j.jcrysgro.2003.12.073

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SiC nanowires over 10 mum in length and 20-100nm in diameter have been synthesized by a novel in situ chemical vapor growth process on RS-SiC plates. The SiC nanowires were identified as single crystal beta-SiC with Si-C chemistry. The growth direction of the nanowires is drop 111 drop. The growth mechanism is discussed and a kinetic vapor-solid growth mechanism is proposed. The process demonstrates the possibility to fabricate SiC nanowires in ceramic matrix composites, such as continuous SiC fibers reinforced SiC matrix composites, with the SiC nanowires uniformly dispersed in the matrix. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：278 / 283

页数：6

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