Thermal conductivity of indium at high pressures and temperatures under shock compression

被引：10

作者：

Molodets, A. M. ^{[1
]}

Golyshev, A. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

PHYSICS OF THE SOLID STATE | 2009年 / 51卷 / 02期

关键词：

62.50.-p; 65.40.-b;

D O I：

10.1134/S1063783409020024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of investigations of the electrical and thermal conductivity of indium in the pressure range up to 27 GPa and at temperatures up to 1000 K are presented. In this pressure range, the electrical resistance of indium samples is measured under multishock compression. The equation of state constructed for indium is used to calculate the evolution of the thermodynamic parameters of indium in shock wave experiments; then, the dependences of the electrical resistivity and thermal conductivity coefficient on the volume and temperature are determined. It is demonstrated that, in the pressure and temperature ranges under investigation, the thermal conductivity coefficient of indium does not depend on temperature and its threefold increase is caused only by the change in the volume under compression.

引用

页码：226 / 229

页数：4

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