Influence of the Magnetic Anisotropy Dispersion in Ge3Mn5 Clusters on the Temperature Dependences of Magnetization in Thin Ge:Mn Films

被引：0
|
作者：
Dmitriev, A. I. [1 ,2 ]
Dmitrieva, M. S. [1 ,2 ]
Ziborov, G. G. [3 ]
机构：
[1] Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia
[2] Moscow State Univ Railway Engn, Russian Univ Transport, Moscow 127055, Russia
[3] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 01期
关键词：
MAGNETOOPTICAL PROPERTIES; MAGNETORESISTANCE; GAAS;
D O I：
10.1134/S106378501901022X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The temperature dependences of magnetization M(T) of thin ion-implanted Ge:Mn (4 at % Mn) films containing Ge3Mn5 clusters were measured on samples cooled in the absence of magnetic field (zero field cooled, ZFC) and in a magnetic field of 10 kOe (field-cooled, FC). It has been established that the shape of ZFC-FC differential M(T) curves is determined by lognormal distribution of the size-dependent magnetic anisotropy energy of Ge3Mn5 clusters. Analysis of the observed ZFC-FC magnetization curves allowed the magnetic anisotropy dispersion (variance) and magnetic anisotropy constant to be estimated.
引用
收藏
页码：34 / 36
页数：3
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