Influence of the Magnetic Anisotropy Dispersion in Ge3Mn5 Clusters on the Temperature Dependences of Magnetization in Thin Ge:Mn Films

被引：0

作者：

Dmitriev, A. I. ^{[1
,2
]}

Dmitrieva, M. S. ^{[1
,2
]}

Ziborov, G. G. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia

[2] Moscow State Univ Railway Engn, Russian Univ Transport, Moscow 127055, Russia

[3] Moscow MV Lomonosov State Univ, Moscow 119991, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 01期

关键词：

MAGNETOOPTICAL PROPERTIES; MAGNETORESISTANCE; GAAS;

D O I：

10.1134/S106378501901022X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependences of magnetization M(T) of thin ion-implanted Ge:Mn (4 at % Mn) films containing Ge3Mn5 clusters were measured on samples cooled in the absence of magnetic field (zero field cooled, ZFC) and in a magnetic field of 10 kOe (field-cooled, FC). It has been established that the shape of ZFC-FC differential M(T) curves is determined by lognormal distribution of the size-dependent magnetic anisotropy energy of Ge3Mn5 clusters. Analysis of the observed ZFC-FC magnetization curves allowed the magnetic anisotropy dispersion (variance) and magnetic anisotropy constant to be estimated.

引用

页码：34 / 36

页数：3

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