Modeling of the linewidth enhancement factor in multi-quantum well InGaAsP based lasers

被引：6
|
作者：
Hybertsen, MS
机构：
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V | 1997年 / 2994卷
关键词：
gain; refractive index; telecommunications laser; semiconductor laser; quantum well;
D O I：
10.1117/12.275624
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A microscopic model of the gain and refractive index change in multi-quantum well lasers is applied to study the linewidth enhancement factor. The following issues in the model are studied: the lineshape used to broaden the gain, band gap renormalization, self consistent band bending and carrier spill out into the separate confinement layers. The application of the model to laser design issues is illustrated through consideration of the influence of well strain and barrier band gap. Comparison is made to experiment.
引用
收藏
页码：747 / 757
页数：11
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