On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases

被引：0

作者：

Stanojevic, Z. ^{[1
]}

Baumgartner, O. ^{[1
]}

Karner, M. ^{[2
]}

Filipovic, La ^{[1
]}

Kernstock, C. ^{[2
]}

Kosina, H. ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria

[2] Global TCAD Solut GmbH, A-1010 Vienna, Austria

来源：

2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2014年

关键词：

CYCLOTRON-RESONANCE; SILICON; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The momentum relaxation time (MRT) is widely used to simplify low-field mobility calculations including anisotropic scattering processes. Although not always fully justified, it has been very practical in simulating transport in bulk and in low-dimensional carrier gases alike. We review the assumptions behind the MRT, quantify the error introduced by its usage for low-dimensional carrier gases, and point out its weakness in accounting for inter-subband interaction, occurring specifically at low inversion densities.

引用

页码：181 / 184

页数：4

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