First-principles studies of lattice dynamics and thermal properties of Mg2Si1-xSnx

被引:9
|
作者
Liu, Xiaohua [1 ]
Wang, Yi [2 ]
Sofo, Jorge O. [2 ,3 ,4 ]
Zhu, Tiejun [1 ]
Chen, Long-Qing [2 ]
Zhao, Xinbing [5 ,6 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[4] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[5] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[6] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
AB-INITIO; THERMOELECTRIC PROPERTIES; HEAT-CAPACITY; THERMODYNAMIC PROPERTIES; 2-4; SEMICONDUCTORS; ELASTIC PROPERTIES; 1ST PRINCIPLES; MG2SI; MG2GE; SCATTERING;
D O I
10.1557/jmr.2015.229
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present the results of a mixed-space approach, based on first-principles calculations, to investigate phonon dispersions and thermal properties of Mg2Si and Mg2Sn, including the bulk modulus, Grneisen parameter, heat capacity, and Debye temperature. It is shown that good agreements are obtained between the calculated results and available experimental data for both phonon dispersions and thermal properties. The phonon dispersions are accurately calculated compared with experimental data due to the high-quality description of LO-TO splitting and transverse acoustic branches along the Gamma-K-X symmetry line. We also calculate the heat capacity C-P and Debye temperature of Mg2Si1-xSnx alloys (x = 0.375, 0.5, 0.625, 0.875). The C-P values at high temperature range from 0.5 to 0.7 J/g/K and Theta(D) values at room temperature from 332 to 384 K as the Sn content decreases from 0.875 to 0.375.
引用
收藏
页码:2578 / 2584
页数:7
相关论文
共 50 条
  • [41] Theoretical investigation of structural, electronic and thermoelectric properties of p-n type Mg2Si1-xSnx system
    Marfoua, Brahim
    Lagoun, Brahim
    Lidjici, Hamza
    Benghia, Ali
    Gueddouh, Ahmed
    PRAMANA-JOURNAL OF PHYSICS, 2019, 94 (01):
  • [42] Thermoelectric Properties Prediction of n-Type Mg2Si1−xSnx Compounds by First Principles Calculation
    Xin Li
    Shuangming Li
    Songke Feng
    Hong Zhong
    Journal of Electronic Materials, 2018, 47 : 1022 - 1029
  • [43] First-principles study on the lattice dynamics and thermodynamics properties of CaFe2As2
    Miao Rende
    Li Yanbiao
    Bai Zhong
    Wang Liang
    Chen Li-an
    PHYSICA B-CONDENSED MATTER, 2010, 405 (19) : 4226 - 4230
  • [44] First-principles investigation of the electronic and lattice vibrational properties of Mg2C
    Li, Tongwei
    Ju, Weiwei
    Liu, Huihui
    Cui, Hongling
    Zhao, Xiaoyan
    Yong, Yongliang
    Feng, Zhenjie
    COMPUTATIONAL MATERIALS SCIENCE, 2014, 93 : 234 - 238
  • [45] Lattice dynamics and elastic properties of Mg3As2 and Mg3Sb2 compounds from first-principles calculations
    Tani, Jun-ichi
    Takahashi, Masanari
    Kido, Hiroyasu
    PHYSICA B-CONDENSED MATTER, 2010, 405 (19) : 4219 - 4225
  • [46] Miscibility gap and thermoelectric properties of ecofriendly Mg2Si1-xSnx (0.1 ≤ x ≤ 0.8) solid solutions by flux method
    Chen, Luxin
    Jiang, Guangyu
    Chen, Yi
    Du, Zhengliang
    Zhao, Xinbing
    Zhu, Tiejun
    He, Jian
    Tritt, Terry M.
    JOURNAL OF MATERIALS RESEARCH, 2011, 26 (24) : 3038 - 3043
  • [47] First-principles study of thermoelectric properties of Mg2Si-Mg2Pb semiconductor materials
    Fan, Tao
    Xie, Congwei
    Wang, Shiyao
    Oganov, Artem R.
    Cheng, Laifei
    RSC ADVANCES, 2018, 8 (31) : 17168 - 17175
  • [48] Electron transport modeling and energy filtering for efficient thermoelectric Mg2Si1-xSnx solid solutions
    Bahk, Je-Hyeong
    Bian, Zhixi
    Shakouri, Ali
    PHYSICAL REVIEW B, 2014, 89 (07)
  • [49] DETERMINATION OF HOST AND DOPANT ION DISTRIBUTION IN MG2SI1-XSNX THERMOELECTRIC MATERIALS BY ELECTRON CHANNELING
    Delimitis, Andreas
    Hansen, Vidar
    Symeou, Elli
    Kyratsi, Theodora
    Minde, Mona Wetrhus
    Tafto, Johan
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2019, 75 : E321 - E321
  • [50] Lattice dynamics and dielectric properties of TiO2 anatase: A first-principles study
    Mikami, M
    Nakamura, S
    Kitao, O
    Arakawa, H
    PHYSICAL REVIEW B, 2002, 66 (15) : 1 - 6