Diffused GaAs/AlGaAs quantum wells with equidistant electronic states

被引:3
|
作者
Donchev, V
Saraydarov, M
Shtinkov, N
Germanova, K
Vlaev, SJ
机构
[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[2] Univ Autonoma Zacatecas, Escuela Fis, Zacatecas 98068, Mexico
来源
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2002年 / 19卷 / 1-2期
关键词
interdiffusion; GaAs/AlGaAs quantum wells; equidistant energies; diffusion length;
D O I
10.1016/S0928-4931(01)00467-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An alternative way to obtain quantum wells (QWs) with equidistant energy levels is proposed. It consists of interface grading of an initially rectangular QW induced by material interdiffusion. The latter can be realised for example by post-annealing. The electronic states in a large number of interdiffused GaAs/AlGaAs QWs are studied by varying the well width and diffusion length. The calculations are made by means of the envelope function approximation. It is shown that a nearly equidistant energy spectrum can be obtained in diffused QWs (DQWs) by choosing an appropriate value of the initial QW width and by adjusting the diffusion length. The annealing times and temperatures of the sample resulting in the needed diffusion lengths are calculated and reasonable values are obtained. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:135 / 138
页数:4
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